Method of forming a perpendicular magnetic recording (PMR) write head with patterned leading edge taper

ABSTRACT

A method is disclosed for forming a perpendicular magnetic recording writer with an all wrap around (AWA) shield design wherein a surface of the leading shield that contacts the lead gap has a notch that is recessed 20 to 120 nm from the air bearing surface (ABS) and has a first side with a down-track dimension of 20-200 nm that is aligned parallel to the ABS. In one embodiment, the notch is aligned below the main pole leading side and has a cross-track width substantially the same as the track width of the main pole trailing side. The notch has two sidewalls formed equidistant from a center plane that bisects the leading shield wherein each sidewall intersects the first side at an angle of 90 to 170 degrees. Accordingly, overwrite and bit error rate are improved while adjacent track interference and tracks per square inch capability are substantially maintained.

This is a Divisional application of U.S. patent application Ser. No.15/595,357, filed on May 15, 2017, which is herein incorporated byreference in its entirety, and assigned to a common assignee.

RELATED PATENT APPLICATIONS

This application is related to the following: U.S. Pat. No. 9,508,364;and U.S. Ser. No. 15/595,338, filing date May 15, 2017; assigned to acommon assignee and herein incorporated by reference in their entirety.

TECHNICAL FIELD

The present disclosure relates to a leading shield structure in a PMRwrite head wherein a notch is formed in a side of the leading shieldadjoining the lead gap and facing the main pole to enhance overwrite(OW) performance, lower the bit error rate (BER), and improve bits perinch (BPI) capability with minimal tradeoff in tracks per inch (TPI)capability or adjacent track interference (ATI) for both conventionaland shingle magnetic recording applications.

BACKGROUND

Perpendicular magnetic recording has been developed in part to achievehigher recording density than is realized with longitudinal recordingdevices. A PMR write head typically has a main pole layer with a smallsurface area at an air bearing surface (ABS), and coils that conduct acurrent and generate a magnetic flux in the main pole such that themagnetic flux exits through a write pole tip and enters a magneticmedium (disk) adjacent to the ABS. Magnetic flux is used to write aselected number of bits in the magnetic medium and typically returns tothe main pole through two pathways including a trailing loop and aleading loop where both involve a shield structure. The trailing loopcomprises a trailing shield structure with first and second trailingshields each having a front side at the ABS. The leading loop includes aleading shield with a front side at the ABS and connected to a returnpath proximate to the ABS. The return path extends to the back gapconnection and enables magnetic flux in the leading loop pathway toreturn from the leading shield through the back gap connection to themain pole layer.

For both conventional (CMR) and shingle (SMR) magnetic recording,continuous improvement in storage area density is required for a PMRwriter. A write head that can deliver or pack higher bits per inch (BPI)and higher tracks per inch (TPI) is essential to the area densityimprovement. A fully wrapped around shield design for a PMR write headis desired where the trailing shield is responsible for improving downtrack field gradient while side shields and a leading shield enhance thecross track field gradient and TPI as well as improve adjacent trackerasure (ATE) also known as ATI.

The key to an optimized PMR writer structure is the capability tocontrol distribution of magnetic flux from the main pole to each shield.Ideally, better control of magnetic flux in the near field or proximateto the main pole is desirable to achieve an enhanced near field gradientand to realize higher area density capability (ADC). Typically, fluxdistribution is controlled by changing the magnetic saturation (Ms) ofmaterials in the shields, and by modifying geometries (size and shape)of the shields. In today's PMR design, most shield optimization effortshave focused on the side shields and trailing shield, and substantiallyless emphasis on the leading shield. However, in order to achieve higherperformance capability associated with PMR writers that require higherTPI capability to at least 400 K/in² for CMR and at least 500 K/in² forSMR, a better design is needed for the leading shield structure.

SUMMARY

One objective of the present disclosure is to provide leading shielddesign for a PMR writer that enables a means of improving overwrite(OW), BPI, and bit error rate (BER) while substantially maintaining ATIand TPI.

Another objective of the present disclosure is to provide a method offorming the leading shield of the first objective that is readilyimplemented in a manufacturing environment.

According to a first embodiment, these objectives are achieved with aPMR writer that has an all wrap around (AWA) shield structure wherein apatterned leading shield, side shields, and trailing shield surround amain pole at the ABS, and adjoin a lead gap, side gap, and write gap,respectively. However, the patterned leading shield is not limited to anAWA shield structure in order to deliver improved PMR writer performanceas described herein. In one embodiment, the main pole has taperedleading side that extends from the ABS to a back end at a first cornerwhere the tapered leading side intersects with a front end of a mainpole leading side formed orthogonal to the ABS. Likewise, the main polemay have a tapered trailing side that extends from the ABS to a secondcorner where the tapered trailing side intersects with a main poletrailing side formed orthogonal to the ABS.

In all embodiments, a key feature is the leading shield structure thathas an upper layer with a patterned side facing the main pole leadingside at the lead gap, and a lower layer with a rectangular shape, and asecond height and cross-track width equal to that of the upper layer.From a down-track cross-sectional view in the exemplary embodiment, afirst section of the patterned leading shield side has a first end atthe ABS and extends substantially parallel to the main pole taperedleading side to a first height from the ABS. At the first height, thereis a notch having a first side formed parallel to a front side of thepatterned leading shield layer at the ABS. The first side extends adown-track distance “t” to a second side of the notch that is alignedorthogonal to the ABS and coincides with a top surface of the lowerlayer. The second side extends from the first height to a second heightat a backside of the leading shield. In a preferred embodiment, thepatterned leading shield backside is aligned parallel to the ABS.

From a top-down perspective from the main pole tapered leading side, thenotch has a rectangular shape with two parallel sides extending from thefirst side at the first height to the backside at the second heightwhere each parallel side is equidistant from a center plane that bisectsthe leading shield and main pole. There is a cross-track width w1between the two parallel sides where w1 is substantially the same as thetrack width of the main pole trailing side at the ABS.

From an ABS view, the main pole may have a trapezoidal shape wherein atrailing side has a track width (TW) that is greater than a cross-trackwidth of the leading side. Moreover, each of the side shield layers hasa main pole facing side that adjoins a side gap layer and is essentiallyparallel to the nearest main pole side. A high Ms (19-24 kG) magneticlayer hereafter called the hot seed layer adjoins a top surface of thewrite gap and is part of the trailing shield structure. In an AWA shielddesign, a trailing shield layer is formed on a top surface of the hotseed layer, adjoins the sides of the write gap and hot seed layer, andcontacts a top surface of the side shield on each side of the main pole.The notch in the patterned leading shield is recessed a first heightdistance behind the ABS, and is aligned below the main pole leadingside.

The patterned leading shield layer serves to release additional mainpole flux from the leading side of the main pole thereby boostingoverwrite capability when writing a bit on the magnetic medium.Thereafter, a substantial portion of the additional flux returns throughthe trailing loop to the main pole and enhances trailing shieldresponse. Because of reduced volume in the patterned leading shieldlayer behind the ABS, higher OW and better BPI is achieved. Sinceleading shield volume is preserved proximate to the ABS, ATI and sideshield response are maintained.

In a preferred embodiment, the first side of the notch in the patternedleading shield layer is recessed a first height of 20 to 120 nm from theABS while the down-track thickness “t” of the first side is from 20 nmto 200 nm, and the cross-track width w1 of the notch is between 100 nmand 1 micron.

A method for forming the patterned side shield is also provided andincludes forming the lower leading shield layer in a dielectric layer,and depositing the upper leading shield layer on a top surface of thelower leading shield layer and dielectric layer. Then a conventionalphotoresist patterning and etching sequence is performed to form abackside on the upper layer at a second height from the eventual ABS,and to form a notch therein having a cross-track width w1 at the centerplane that bisects the leading shield. Subsequently, a secondphotoresist patterning and etching sequence is used to form a taper on atop surface of the upper layer thereby determining a final thickness “t”of the first side.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a down-track cross-sectional view showing a PMR writer thathas a double write shield (DWS) design with two flux return pathways tothe main pole.

FIG. 2A is a down-track cross-sectional view of a main pole proximate toan ABS where a leading shield side adjoining a lead gap is formedsubstantially parallel to a tapered leading side of the main poleaccording to a prior art design.

FIG. 2B shows a top-down view of the leading shield in FIG. 2A from aperspective at the main pole tapered leading side, and shows the leadingshield backside is planar, and is parallel to the leading shield frontside at the ABS.

FIG. 3A is a down-track cross-sectional view of a PMR writer wherein apatterned leading shield layer with a tapered side at the lead gap has anotch that is recessed from the ABS according to an embodiment of thepresent disclosure.

FIG. 3B is top-down view of the patterned leading shield layer in FIG.3A from a perspective at the main pole tapered leading side, and showsthe notch with a rectangular shape according to an embodiment of thepresent disclosure.

FIG. 3C is an ABS view of an all wrap around (AWA) shield structurecomprised of a patterned leading shield layer with a recessed notchaccording to an embodiment of the present disclosure.

FIG. 4A is a down-track cross-sectional view of a PMR writer wherein apatterned leading shield layer with a tapered side at the lead gap has acurved notch according to a second embodiment of the present disclosure.

FIG. 4B is top-down view of the leading shield patterned layer in FIG.4A from a perspective at the main pole tapered leading side, and showsthe curved notch has a substantially rectangular shape.

FIG. 5A and FIG. 6A are down-track cross-sectional views depicting asequence of steps in forming a patterned leading shield layer with anotch according to an embodiment of the present disclosure.

FIG. 5B and FIG. 6B are top-down views of the partially formed leadingshield layer depicted in FIG. 5A and FIG. 6A, respectively.

FIGS. 7-10 are down-track cross-sectional views showing a secondsequence of steps in forming a patterned leading shield layer with anotch according to a first embodiment of the present disclosure.

FIG. 11A is a graph showing the results of Hy field vs. erase width inan AC field mode (EWAC) for a PMR writer having a conventional leadingshield, and with a patterned leading shield according to an embodimentof the present disclosure.

FIG. 11B is a graph showing the results of down-track gradient vs.cross-track gradient for a PMR writer having a conventional leadingshield, and with a patterned leading shield according to an embodimentof the present disclosure.

FIG. 12A is a graph showing ATI mapping as a function of down-track andcross-track positions for a PMR writer with a conventional leadingshield, and FIG. 12B shows similar ATI mapping for a PMR writer with apatterned leading shield according to an embodiment of the presentdisclosure.

FIG. 13A is a graph showing spinstand data in terms of overwrite vs.EWAC for a PMR writer with a conventional leading shield, and with apatterned leading shield according to an embodiment of the presentdisclosure.

FIG. 13B is a graph showing spinstand data in terms of BER vs. EWAC fora PMR writer with a conventional leading shield, and with a patternedleading shield according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

The present disclosure relates to a leading shield design where a sideof the leading shield that adjoins the lead gap and faces the main polelayer is patterned to enable additional magnetic flux from the main poleleading side to improve OW and BER when writing a bit on a magneticmedium that is proximate to the ABS. The exemplary embodiments depict amain pole with a tapered leading side and tapered trailing side.However, the present disclosure also anticipates that one or both of themain pole leading side and trailing side proximate to the ABS are nottapered but are formed along a plane that is orthogonal to the ABS. Inthe drawings, the y-axis is a cross-track direction, the z-axis is adown-track direction, and the x-axis is in a direction orthogonal to theABS and towards a back end of the PMR writer. Thickness refers to adown-track distance, width is a cross-track distance, and height is adistance in a direction orthogonal to the ABS. It should be understoodthat the patterned leading shield design described herein is compatiblewith a variety of PMR writer structures and is not limited to the PMRwriter depicted in FIG. 1.

Referring to FIG. 1, a PMR writer currently fabricated by the inventorsaccording to a process of record (POR) is depicted in a down-trackcross-sectional view from a plane that is orthogonal to ABS 10-10 andpasses through the main pole layer 14. The PMR writer is formed on asubstrate 1 that may comprise a read head in a combined read/write head,for example. The substrate is typically part of a slider (not shown)formed in an array of sliders on a wafer. After the PMR writer iscompleted, the wafer is sliced to form rows of sliders. Each row istypically lapped to afford an ABS before dicing to fabricate individualsliders that are used in magnetic recording devices.

A return path (RTP) layer 9 may also serve as a S2B shield in theunderlying read head in an embodiment where the PMR writer is part of acombined read/write head as appreciated by those skilled in the art. TheRTP layer is recessed from the ABS 10-10 but is able to transmit fluxfrom magnetic medium 46 to main pole 18 through the leading loop returnpathway that may include a leading shield 12, leading shield connector(LSC) 33, S2C shield 32, the RTP, and a back gap connection (BGC)comprised of magnetic sections 45 a-45 c. In other embodiments, one orboth of the LSC and S2C layers may be omitted such that the leadingshield contacts the RTP layer.

The BGC may be depicted with three sections formed in a laminated mannerand represented by stack 45 a/45 b/45 c wherein a bottommost (lower)section 45 a contacts a top surface of RTP 9, and an uppermost section45 c contacts a back portion of the bottom surface of main pole 14. Inthe exemplary embodiment, there is a first insulation layer 20 formed onthe RTP and having an ABS facing side adjoining a bottom portion of theS2C 32 back side, and a back side abutting an ABS facing side of BGClower section 45 a. A second insulation layer 30 is formed on the firstinsulation layer and extends orthogonal to the ABS from an upper portionof the S2C back side to an ABS facing side of BGC section 45 b. In someembodiments, a bucking coil layer with three turns 40 a-40 c is formedwithin the second insulation layer and between the S2C backside and BCGsection 45 b. However, the present disclosure also anticipates that abucking coil layer with one turn, two turns, or four turns in a 1+1T,2+2T, or 4+4T configuration may be employed as appreciated by thoseskilled in the art. Bucking coils are wound in series with an oppositepolarity to that in the driving coils 24 to minimize direct couplingbetween the first trailing shield 18 and driving coils. A top surface ofthe bucking coil layer is preferably coplanar with a top surface of thesecond insulation layer, a top surface of BGC section 45 a, and a topsurface of S2C shield 32.

The second insulation layer 30 may also be formed between the ABS 10-10and an upper portion of the ABS facing side of S2C shield 32. Firstinsulation layer 20 may be formed between the ABS and a bottom portionof the ABS facing side of the S2C shield. RTP 9 is formed withininsulation layer 19 and is recessed a certain distance from the ABS.Insulation layers 19, 20, 30 are comprised of a dielectric material andthe bucking coil layer 40 a-40 c is typically a conductive material suchas Cu. In the process of record (POR) practiced by the inventors,leading shield 12, LSC 33, S2C, back gap connection 45 a-45 c, and RTP 9may be made of CoFeN, NiFe, CoFe, CoFeNi with a saturation magnetization(Ms) value of 10 kG to 16 kG.

A third insulation layer 31 contacts the top surface of the bucking coilturns 40 a-40 c and the second insulation layer 30 between a back sideof LSC 33 and an ABS facing side of BGC section 45 c. A fourthinsulation layer 11 is formed on the third insulation layer and on aback end portion of the LSC. The fourth insulation layer extends from abackside of the leading shield 12 to an ABS facing side of uppermost BGCsection 45 c. According to one embodiment, first through secondinsulation layers have a combined thickness in a down-track directionsubstantially the same as BGC section 45 a, while the third insulationlayer has a thickness essentially the same as BGC section 45 b. In someembodiments, a bottom yoke (not shown) is provided between a lead gap 13and a back portion of the main pole that adjoins the top surface of BGCsection 45 c. In the exemplary embodiment, insulation layer 11 is alsoformed behind the lead gap and leading shield.

Above insulation layer 36 is the main pole 14 that may be comprised ofCoFe, NiFe, CoFeNi or another magnetic material with a Ms of 19-24 kG.The main pole has a write pole tip 14 p at the ABS 10-10, and extendstoward the back end of the device where a back portion is magneticallyconnected with BGC section 45 c. The leading shield is separated fromthe main pole by the lead gap 13. Flux from the main pole enters amagnetic medium 46 and returns in part as flux 70 a though the leadingloop comprised of LS 12, LSC 33, S2C 32, RTP 9, and BGC 45 a-45 c.

Returning to FIG. 1, the first trailing shield structure may include alower magnetic (hot seed) layer with front portion 17 a on write gap(not shown), and back portion 17 b above a trailing side of the mainpole 14. An upper layer in the first trailing shield structure ismagnetic layer 18 that adjoins a bottom surface of an overlying secondtrailing shield also known as PP3 trailing shield 26. The trailingshield structure serves as a flux return pathway 70 b wherein flux froma magnetic medium enters the first trailing shield and passes throughthe PP3 trailing shield to a back portion of main pole 14. The firsttrailing shield layer 18 and PP3 trailing shield are typically made of10-19 kG materials.

There is a top yoke 39 contacting a portion the top surface of the mainpole 14. The top yoke and bottom yoke (when present) transmit magneticflux to the main pole where the flux 70 is concentrated at main pole tip14 p. The top yoke extends to a backside at point A where the top yoketouches the inner corner of PP3 26 above a back portion of the mainpole. A bottom yoke may be included in the write head structure toprovide a faster writer response compared with designs where only a topyoke is employed. An insulation layer 22 is formed on a portion of thenon-magnetic layer 16 and top yoke behind trailing shield layer 18. Acurrent is passed through driving coil layer 24 that is disposed on theinsulation layer 22 to generate magnetic flux in the top yoke and mainpole. The driving coil layer 24 may have one or a plurality of turns.Three turns are depicted above the main pole in this embodiment. Buckingcoils are connected to driving coils through connector 35 that is agreater distance from the ABS than BGC 45.

In the exemplary embodiment, the PP3 trailing shield arches over drivingcoil layer 24 and connects with the top surface of the top yoke abovethe BGC 45 c. The PP3 trailing shield may have a dome shape as in theexemplary embodiment or may have a planar top surface that is parallelto a top surface of the main pole. An insulation layer 25 is formed onthe insulation layer 22 and fills the openings between the turns ofdriving coil layer 24 and the space between a top surface of the drivingcoils and a bottom surface of the PP3 shield layer 26. A protectionlayer 27 covers the PP3 trailing shield and is made of an insulatingmaterial such as alumina. Above the protection layer and recessed acertain distance from the ABS 10-10 is an optional cover layer 29 thatis preferably comprised of a low CTE material such as SiC that serves toreduce the WG protrusion rate. The SiC cover layer is recessed to avoidintroducing a material at the ABS with different mechanical and etchresistance properties than adjacent layers which could adversely affectback end lapping and ion beam etching processes. An overcoat layer 28 isformed as the uppermost layer in the write head.

There are two pathways for magnetic flux to return to the write headfrom magnetic medium 46. For example, magnetic flux 70 from main pole 14exits through write pole tip 14 p into a magnetic medium and may returnvia leading loop 70 a as described previously. Flux from the magneticmedium also returns to the write head via pathway 70 b by entering hotseed layer 17 a at the ABS and then passing through write shield 18 andPP3 trailing shield 26 before reaching the main pole. The dual fluxreturn pathway in the POR design is employed to reduce side trackerasure (STE).

Referring to FIG. 2A, a down-track cross-sectional view of the PMRwriter in FIG. 1 is depicted with a conventional leading shield 12. Theleading shield adjoins a bottom surface of lead gap 13 and has a planarside 12 n that faces tapered leading side 14 b 1 of the main pole 14.Side 12 n extends from the ABS 10-10 to a height c at leading shieldbackside 12 e, which is parallel to the front side 12 f at the ABS. Thehot seed layer has a first portion 17 a facing main pole taperedtrailing side 14 t 1 and with a front side 17 f at the ABS, and a secondportion 17 b connected to a back end of the first portion and alignedparallel to main pole trailing side 14 t 2. Trailing shield 18 adjoinsthe hot seed layer portions 17 a, 17 b on sides thereof facing away fromthe write gap 15, and has a front side 18 f at the ABS and a backside 18e at a second height h from the ABS where h>c.

In FIG. 2B, leading shield 12 in FIG. 2A is pictured from a top down(down-track) perspective from main pole tapered leading side 14 b 1 andwith lead gap 13 removed. The leading shield backside 12 e has across-track width w between far sides 12 x, and is planar with a surfacethat is uninterrupted by any openings.

In related U.S. Pat. No. 9,508,364, we disclosed how greater areadensity capability (ADC) and writer speed are realized in a PMR writerby modifying a conventional leading shield as well as the trailingshield, and side shields in a AWA shield configuration to include a 19kG to 24 kG magnetic material with a damping parameter α of ≥0.04. Nowwe have discovered that further improvement in PMR writer performance isachieved through a leading shield shape involving a patterned side thatfaces the main pole leading side and adjoins the lead gap layer.

In related application Ser. No. 15/595,338, we disclosed how a lowerportion of a leading shield is patterned with a notch that is recessedfrom the ABS and bisected by a center plane. Thus, a PMR writer isformed with improved TPI while substantially maintaining BPI thatresults in a net ADC gain. In some PMR writer designs, there is a needfor greater BPI without a significant tradeoff in lower TPI for anoverall net ADC improvement. Now, we have discovered a patterned leadingshield structure to satisfy the aforementioned requirement.

Referring to FIG. 3A, a leading shield is depicted with a patternedupper layer 12-2 and a rectangular shaped lower layer 12-1 according toone embodiment of the present disclosure. The down-track cross-sectionalview is taken along a center plane (plane 42-42 in FIG. 3C) that bisectsthe main pole and leading shield. The trailing shield structurecomprised of hot seed layer portions 17 a, 17 b and magnetic layer 18 isretained from the POR structure illustrated in FIG. 2A. However, thepresent disclosure anticipates that other trailing shield structuresused in the art may replace the POR scheme and yet enable all of thebenefits of the patterned leading shield design in the exemplaryembodiment.

According to the exemplary embodiment, main pole 14 has a taperedleading side 14 b 1 extending from the ABS 10-10 to a second leadingside 14 b 2 that is aligned orthogonal to the ABS as describedpreviously. The leading sides 14 b 1, 14 b 2 intersect at corner 14 ccorresponding to an end of the tapered leading side that is at height kfrom the ABS. Moreover, the main pole retains a tapered trailing side 14t 1 extending from the ABS to a second trailing side 14 t 2 alignedparallel to side 14 b 2 as previously indicated. Dielectric layer 11contacts the backside 12 e 1 of leading shield layer 12-1 whiledielectric layer 16 adjoins the backsides 17 e, 18 e of hot seed layerportion 17 b and trailing shield 18, respectively, behind write gap 15.Lead gap 13 has a front side at the ABS.

A key feature of the leading shield design of the present disclosure isthat the upper layer 12-2 adjoining the lead gap 13 is modified toinclude a notch having a first side 12 v formed parallel to the ABS10-10, and a second side 12 w aligned orthogonal to the ABS from adown-track cross-sectional view. The second side coincides with aportion of the top surface of lower layer 12-1. Moreover, the upperlayer has a third side 12 u that is tapered and aligned substantiallyparallel to the main pole tapered leading side. The third side extendsfrom the ABS to a back end at first height a, which is 20 to 120 nm fromthe ABS. First side 12 v extends from the back end of third side 12 ufor a down-track distance t of 20 to 200 nm. Second side 12 w extendsfrom an end of side 12 v at corner 12 c of the notch to backside 12 e 1that is at height c of 100 to 300 nm from the ABS. In the exemplaryembodiment, c>a and c<k. However, in some embodiments, c may be greaterthan k. Both of the upper layer and lower layer have a front side 12 fat the ABS. Back side 12 e 1 extends from an end of side 12 w at heightc to the leading shield bottom surface 12 b.

Referring to FIG. 3B, a top-down view of the patterned leading shieldupper layer 12-2 in FIG. 3A is shown from a perspective at the main poletapered leading side 14 b 1 with the lead gap removed. The notch isfilled with a dielectric layer 41 such as SiO₂ and has a cross-trackwidth w1 from 100 nm to 1 micron between two sidewalls 12 s that eachconnect an end of first side 12 v with a backside section 12 e 1 or 12 e2. In the exemplary embodiment, angle β that is formed by theintersection of each sidewall 12 s with first side 12 v is 90°. However,the present disclosure anticipates angle β may be greater than 90° andup to 170° such that the cross-track distance at the top of the notchbetween backside sections 12 e 1 and 12 e 2 is greater than distance w1at the base, which is the width of first side 12 v. The notch isbisected by center plane 42-42 that also bisects main pole leading side14 b 1 and trailing side 14 t 1 in a down-track direction (FIG. 3C) suchthat each sidewall 12 s is ½ w1 from the center plane. In the exemplaryembodiment, w1 is aligned below the main pole tip 14 p in a down-trackdirection, and w1 is substantially equal to the track width (TW) at thetrailing side of the main pole. In some embodiments, w1 may have a valuebetween 1× and 5× that of TW and still provide the benefits of higherBPI, better OW and BER while substantially maintaining TPI and ATI for anet ADC improvement.

Referring to FIG. 3C, an ABS view of an all wrap around (AWA) shieldembodiment is shown where the shield structure comprising side shields51, trailing shield 18, and leading shield 12′ comprised of lower layer12-1 and upper layer 12-2 completely surrounds the main pole tip 14 p.Note that the view in FIG. 3A is taken along center plane 42-42 in FIG.3C. The leading shield top edge 12 t 1 is not shown in FIG. 3A but isthe location where side 12 u ends at the ABS 10-10. In FIG. 3C, sideshields 51 adjoin a side of the side gap 50 that is a side gap distanceg from each main pole side 14 s. Each side shield adjoins the top edge12 t 1 of the leading shield, and contacts a bottom surface 18 b of thetrailing shield at the ABS. Write gap 15 has a thickness d, and agreater cross-track width than track width TW of the write pole 14. Thewrite gap contacts a top surface (trailing side) 14 b of the write poletip in addition to top surfaces of side gaps 50 and side shields 51.Trailing shield hot seed layer 17 a may have a cross-track width that isessentially equivalent to that of the write gap, and has a thickness e.Side shields and trailing shield 18 may be comprised of a 10-19 kGmagnetic material such as CoFe, CoFeNi, FeNi, and CoFeN. Leading shieldsidewalls 12 s and side 12 w are recessed behind the ABS in this view.Lead gap 13 has a front side at the ABS that contacts main pole leadingside 14 b 1, and adjoins top edge 12 t 1.

In one embodiment, leading shield 12′ is made of CoFe, CoFeNi, or CoFeN.In other embodiments, the patterned leading shield may comprise a highdamping material with a damping parameter α≥0.04 that is an alloy suchas FeNiM, FeCoM, or FeCoNiM where M is one of Re, Os, Ir, Rh, Ti, Ta, V,Cr, W, Mn, Mo, Cu, Zr, Nb, Hf, Ru, Pd, Pt, Ag, and Au as disclosed inrelated U.S. Pat. No. 9,508,364.

Referring to FIG. 4A, the present disclosure also encompasses a secondembodiment that retains all aspects of the first embodiment includingthe leading shield bilayer structure and composition from FIG. 3A exceptthe shape of the notch is modified from one having a square corner to acurved notch having a curved side 12 r that extends from a back end oftapered side 12 u at height a to backside 12 e 1 at height c where c>a.Thus, a first portion of the curved side proximate to side 12 u isaligned substantially parallel to the ABS 10-10 while a second portionthereof proximate to the backside is substantially parallel to the mainpole tapered leading side. It should be understood that due tolimitations in fabricating the notch with dimensions a and t around 100nm or less, a certain amount of rounding may occur during aphotolithography process that transfers a notch pattern with a squarecorner on a quartz mask into a photoresist masking layer formed on theleading shield as explained later. Furthermore, a subsequent etchprocess required to transfer the pattern from the photoresist maskinglayer into the leading shield may duplicate a rounded notch shape in theupper layer 12-2. Preferably, the down-track dimension t of the notch issubstantially maintained.

In FIG. 4B, a top-down view of the notch with curved side 12 r in FIG.4A is illustrated. According to one embodiment, the cross-track width w1between backside sections is maintained when angle β is 90° betweencurved side 12 r at center plane 42-42 and upper portions of sides 12 s1. However, lower portions of sides 12 s 1 proximate to side 12 r alsoexhibit a certain amount of rounding and are not parallel to centerplane 42-42. It should be understood that even with a curved side 12 r,the notch provides essentially the same benefits as in the firstembodiment because the cross-track width w1 and depth t of the curvednotch are substantially the same as in the first embodiment. The notchis filled with dielectric layer 41 described previously.

The present disclosure also encompasses a method of forming a PMR writerhaving an AWA shield design with a patterned top surface in a leadingshield layer that faces the main pole according to an embodimentdescribed herein. Only the process steps associated with leading shieldformation are described. The remainder of the PMR fabrication sequencecomprises conventional steps that are well known in the art and are notdescribed herein.

From a down-track cross-sectional perspective that depicts plane 10-10(the eventual ABS location) in FIG. 5A, leading shield (LS) lower layer12-1 is provided as a substrate, and a top surface 12 t thereof iscoplanar with top surface 11 t of dielectric layer 11 that adjoinsbackside 12 e 1 of the LS lower layer. The LS lower layer is formedwithin the dielectric layer by a conventional method. Note that plane10-10 is orthogonal to top surface 11 t. As appreciated by those skilledin the art, the ABS will not be determined until all layers in the PMRwriter are formed, and a lapping process is performed. LS upper layer12-2 with top surface 12 t 2 may be plated on the LS lower layer and onthe adjoining dielectric layer. Next, a photoresist layer 50 is coatedand is patternwise exposed and developed by a conventional method togenerate a backside 50 e thereby exposing LS upper layer top surface 12t 2 at a height>a from the eventual ABS.

Referring to FIG. 5B, a top-down view of the photoresist layer 50 inFIG. 5A is shown. Sides 50 s and side 50 v form a notch having across-track width w1, and there is a height c between the eventual ABS10-10 and backside 50 e of the photoresist layer. Sides 50 x are alignedabove the desired location of sides 12 x in the final patterned leadingshield structure. Likewise, sides 50 s and side 50 v will determine theposition of sides 12 s and side 12 v, respectively, in the patternedleading shield layer 12-2. In some embodiments, the intersection of eachside 50 s with side 50 v may form a curved shape due to limitations inthe photoresist patterning process, especially when down-track dimensiont approaches 20 nm.

In FIG. 6A, the partially formed leading shield structure is depictedafter an etch process is employed to remove exposed portions of LS upperlayer 12-2 that are not protected by photoresist layer 50. The etchprocess end point is reached when top surface 11 t of dielectric layeris uncovered. Preferably, the etch process also stops at top surfaceportion 12 w of LS lower layer 12-1 within the notch opening. Etchprocess conditions are usually controllable to the extent that a squarecorner formed by sides 50 s, 50 v in the photoresist layer isessentially duplicated in upper layer 12-2 as a square corner betweensides 12 s, 12 v. Thereafter, the photoresist layer is stripped by awell known method. As a result, first side 12 v is formed at a backsideof the LS upper layer at height a from the eventual ABS 10-10. Also, atop surface portion 12 t 2 of LS upper layer 12-2 is uncovered betweenfirst side 12 v and plane 10-10.

Referring to FIG. 6B, a top-down view of the partially formed patternedleading shield structure in FIG. 6A is shown. Angle β is formed betweeneach side 12 s and side 12 v. Moreover, side 12 v is recessed a distancea from the eventual ABS 10-10, and backsides 12 e 1, 12 e 2 areestablished for LS upper layer 12-2.

In FIG. 7, the partially formed patterned leading shield structure isillustrated after a dielectric layer 41 is deposited on top surfaces 12t 2, 12 w and 11 t by a chemical vapor deposition (CVD) or plasmaenhanced CVD method, for example. The dielectric layer may be comprisedof SiO₂, Al₂O₃, or the like. Thereafter, a chemical mechanical polish(CMP) method is employed to form dielectric layer top surface 41 t thatis coplanar with LS upper layer top surface 12 t 2.

Referring to FIG. 8, a second photoresist layer 51 is coated on the topsurface 12 t 2 of LS upper layer 12-2 and on dielectric layer topsurface 41 t. The photoresist is patternwise exposed and developed toform a pattern comprising a backside 51 e that is on an opposite side ofplane 10-10 with respect to dielectric layer 41. Accordingly, a portionof top surface 12 t 2 is uncovered between backside 51 e and the ABS,and all of top surface 41 t is uncovered as well as top surface 12 t 2between the dielectric layer and the eventual ABS.

Referring to FIG. 9, the partially formed leading shield structure inFIG. 8 is shown after a conventional ion beam etch (IBE) is performed inwhich ions are directed at an angle of 15° to 75° with respect to thez-axis. The IBE stops before reaching top surface 11 t such that acertain thickness of dielectric layer 41 remains below top surface 41 t1, and between LS upper layer side 12 v and a back end of the device.Side 12 v has a thickness t that is less than the thickness of LS upperlayer 12-2 at plane 10-10. As a result of the angled etch, tapered side12 u is formed as the top surface of LS upper layer 12-2. A conventionalprocess is used to remove any remaining photoresist. Thereafter, thelead gap (not shown) is formed on tapered side 12 u and on dielectriclayer top surface 41 t.

In FIG. 10, the completed leading shield structure is shown after allPMR writer layers have been formed by conventional methods, and alapping process is employed to determine the position of ABS 10-10.Overlying layers in the PMR writer are depicted in FIG. 1 according toone embodiment, and are not shown in FIG. 10 in order to focus on theleading shield layout.

In order to demonstrate the advantages of the patterned leading shielddesign of the present disclosure, a simulation was performed to comparea POR leading shield reference with that of an embodiment describedherein. In both of the reference (POR leading shield) and the patternedleading shield, the design parameters are the following: cross-trackwidth w of 14 microns; height c of 150 nm; and a leading shield made ofa 12 kG material. The main pole has a track width of 45 nm. According toan embodiment described with respect to FIGS. 3A-3C, the patternedleading shield has a notch with 90° sidewalls that is recessed 50 nmfrom the ABS (height a), has a cross-track width w1 of 200 nm, and adown-track depth t of 62.5 nm.

Referring to FIG. 11A, Hy field on the recording media is plotted vs.erase width in AC mode (EWAC) for a PMR writer with the leading shieldreference (point 80), and for the patterned leading shield embodiment(point 81) depicted in FIGS. 3A-3C. Finite-element-method (FEM)simulation results indicate the patterned leading shield enables a PMRwriter with greater field strength. Moreover, in FIG. 11B where downtrack field gradient is plotted vs. cross-track field gradient for thePOR reference (point 82) and for the patterned leading shield (point 83)described previously, higher down-track field gradient is observed forthe patterned leading shield while cross-track field gradient issubstantially maintained. Accordingly, the simulation results indicate aPMR writer with a patterned leading shield of the present disclosurewill provide higher OW and BPI while TPI is substantially maintained.

FIG. 12A depicts a simulation result of ATI mapping for a PMR writerwith a POR leading shield structure. FIG. 12B shows a simulation resultof ATI mapping for a PMR writer with a patterned leading shield with thedesign parameters mentioned above. Micromagnetic simulation resultsreveal there is no significant difference between FIG. 12A and FIG. 12Bwhich means ATI is maintained when replacing a POR leading shield designwith a patterned leading shield described herein.

Referring to FIG. 13A where OW is plotted vs. EWAC, spinstand data isshown for a PMR writer having a POR leading shield design (curve 90),and for a PMR writer with a patterned leading shield described herein(curve 91). The patterned leading shield design affords an OW gain ofabout 2-3 dB. Meanwhile, BER is plotted vs. EWAC in FIG. 13B for the PMRwriter with a POR leading shield (curve 92) and for a PMR writer with apatterned leading shield (curve 93) disclosed herein. There is a BERgain of 0.3 to 0.4 orders of magnitude shown by curve 93. Thus, both OWand BER are improved by incorporating a patterned leading shield of thepresent disclosure in a PMR writer.

While the present disclosure has been particularly shown and describedwith reference to, the preferred embodiment thereof, it will beunderstood by those skilled in the art that various changes in form anddetails may be made without departing from the spirit and scope of thisdisclosure.

We claim:
 1. A method of forming a patterned leading shield structure ina perpendicular magnetic recording (PMR) writer, comprising: (a)providing a first leading shield (LS) layer with a top surface, a firstcross-track width (w) at a first plane that is orthogonal to the firstLS layer top surface, and a first height (c) between the first plane anda backside that is aligned parallel to the first plane, and wherein thefirst LS layer backside adjoins a front side of a dielectric layerhaving a top surface which is coplanar with the first LS layer topsurface; (b) forming a second leading shield (LS) layer on the first LSlayer top surface, the second LS layer has the first cross-track widthat the first plane, and a backside that is at the first height from thefirst plane, and wherein the second LS layer has a top surface with anotch formed therein, the notch comprises a first side that is recesseda second height (a) from the first plane, is formed parallel to thefirst plane and extends a first down-track distance from the top surfaceto a second notch side that is orthogonal to the first plane, andextends from an end of the first notch side to the second LS layerbackside; (c) forming a second dielectric layer on the top surfaces ofthe first LS layer and first dielectric layer wherein the seconddielectric layer has a top surface that is coplanar with a top surfaceof the second LS layer and has a front side that adjoins the second LSlayer backside; (d) performing an angled ion beam etch that forms atapered top surface on the second LS layer such that a thickness of thesecond LS layer at the first height is less than a thickness of thesecond LS layer at the first plane; and (e) performing a lapping processthat forms an air bearing surface (ABS) at the first plane, and a frontside of each of the first and second LS layers at the ABS.
 2. The methodof claim 1 wherein the first leading side is tapered and the main poleis further comprised of a second leading side aligned orthogonal to theABS, the second leading side has a front end connecting with a back endof the first leading side at a third height (k) from the ABS.
 3. Themethod of claim 1 wherein the first and second leading shield layers aremade of CoFe, CoFeNi, FeNi, or CoFeN that is a 10-19 kG material.
 4. Themethod of claim 1 wherein the first cross-track width is about 100 nm to1 micron.
 5. The method of claim 1 wherein the first down-track distanceis about 20 nm to 200 nm.
 6. The method of claim 1 wherein the secondheight is about 20 nm to 120 nm.
 7. The method of claim 1 wherein thefirst height is about 100 nm to 300 nm.
 8. The method of claim 1 furthercomprised of forming a lead gap on the second LS layer tapered topsurface, and on the second dielectric layer top surface before thelapping process.
 9. The method of claim 8 wherein the notch furthercomprises two sidewalls that are formed equidistant from a center planethat bisects the first and second LS layers and the main pole, andwherein each of the two sidewalls intersects the first side an anglefrom about 90 to 170 degrees.
 10. The method of claim 1 wherein thefirst and second leading shield layers have a damping parameter α≥0.04and are comprised of an alloy that is one of FeNiM, FeCoM, and FeCoNiMwhere M is one of Re, Os, Ir, Rh, Ti, Ta, V, Cr, W, Mn, Mo, Cu, Zr, Nb,Hf, Ru, Pd, Pt, Ag, and Au, and the M content is about 3 atomic % to 15atomic % in the alloy.